ds15002 rev. g-2 1 of 2 rs1a/b - rs1m/b www.diodes.com diodes incorporated rs1a/b - rs1m/b 1.0a surface mount fast recovery rectifier features a, b, d, g, j, k, m suffix designates sma package ab, bb, db, gb, jb, kb, mb suffix designates smb package sma smb dim min max min max a 2.29 2.92 3.30 3.94 b 4.00 4.60 4.06 4.57 c 1.27 1.63 1.96 2.21 d 0.15 0.31 0.15 0.31 e 4.80 5.59 5.00 5.59 g 0.10 0.20 0.10 0.20 h 0.76 1.52 0.76 1.52 j 2.01 2.62 2.00 2.62 a b c d g h e j glass passivated die construction fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 30a peak ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch sma weight: 0.064 grams (approx.) smb weight: 0.093 grams (approx.) mounting position: any marking: type number maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. notes: 1. valid provided that terminals are kept at ambient temperature. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. reverse recovery test conditions: i f = 0.5a, i r = 1.0a, i rr = 0.25a. see figure 5. characteristic symbol rs1 a/ab rs1 b/bb rs1 d/db rs1 g/gb rs1 j/jb rs1 k/kb rs1 m/mb unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current @ t t = 120 c i o 1.0 a non-repetitive peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage drop @ i f = 1.0a v fm 1.3 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ t a = 125 c i rm 5.0 200 a reverse recovery time (note 3) t rr 150 250 500 ns typical junction capacitance (note 2) c j 15 pf typical thermal resistance, junction to terminal (note 1) r jt 20 k/w operating and storage temperature range t j, t stg -65 to +150 c
ds15002 rev. g-2 2 of 2 rs1a/b - rs1m/b www.diodes.com 0 0.4 1 . 2 25 50 75 100 125 150 175 i , average rectified current (a) o t , terminal temperature ( c) t fi g . 1 forward current deratin g curve 0.2 0.6 0.8 1.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i instantaneous forward current (a) f, v , instantaneous forward voltage (v) f fi g . 2 t y pical forward characteristics 0 10 20 30 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fi g .3 forwardsur g e current deratin g curve single half-sine-wave (jedec method) t = 150c j 50v dc approx oscilloscope (note 1) pulse generator (note 2) device under te s t t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 125 c j t=25c j
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